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In this paper, we present a new design of TAS-MRAM, which is dedicated for the embedded applications. The Thermally Assisted Switching (TAS) approach allows the low power memory programming and Pre-Charge Sense Amplifiers (PCSA) enable the reliable, high speed and low power sensing. By using a TAS-MTJ spice model integrating the precise experimental parameters and CMOS 130nm technology, simulations...
Hybrid Nano (e.g. Nanotube, Nanowire) /CMOS circuits combine both the advantages of Nano-devices and CMOS technologies; they have thus become one of the most promising candidates to relax the intrinsic drawbacks of CMOS circuits beyond Moore's law. A behavioral simulation model for an hybrid Nano/CMOS design is presented in this paper. It is based on Optically Gated Carbon NanoTube Field Effect Transistors...
As one of the most promising spintronics applications, MRAM combines the advantages of high writing and reading speed, limitless endurance and non-volatility. The integration of MRAM in FPGA allows the logic circuit to rapidly configure the algorithm, the routing and logic functions, easily realize the dynamical reconfiguration and multi-context configuration. However, the conventional MRAM technology...
Spin Transfer Torque (STT) writing approach based Magnetic Tunnel Junction (Spin-MTJ) is the excellent candidate to be used as Spintronics device in Magnetic RAM (MRAM) and Magnetic Logic. We present the first Non-volatile Flip-Flop based on this device for Field Programmable Gate Array (FPGA) and System On Chip (SOC) circuits, which can make these circuits fully non-volatile by storing permanently...
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