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The degradation of Al wire bonding strength of MOSFET devices under thermal shock test was investigated. In the thermal shock test, two kinds of Al wires (250um/380um) in different packaging have been studied. Degradation behaviors of the Al wire bonds during thermal shock tests were evaluated by measuring pull stresses and comparing these values with those of the original Al wire bonds. In this work...
With the high speed development of information technology, the circuit assembly density becomes higher, which caused that the power density and the demand for heat dissipation increase. The traditional packaging metals such as copper, aluminum play a good performance on the heat conduction, but a higher heat mismatch stress is caused by the difference of the thermal expansion coefficient between packing...
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