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The paper reports a growth of the high-quality Gd₃Ga₅O₁₂ (GGG) homoepitaxial films by the liquid phase epitaxy technique using the PbO-B₂O₃ and PbO-B₂O₃-V₂O₅ fluxes. The influence of the flux composition containing V₂O₅ as well as the growth temperature is discussed basing on the optical absorption and the electron probe micro analysis results.
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