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In the article the results of research on gallium arsenide irradiated with H+ ions have been presented as well as occurred correlations between probability of electron’s jump and sample annealing temperature have been discussed. Obtained results have confirmed that value of probability is strictly connected with the type of radiation defects formed as a consequence of irradiating tested sample with...
W artykule przedstawiono rezultaty badań właściwości elektrycznych arsenku galu zdefektowanego polienergetyczną implantacją jonów H⁺. Dokonano analizy mechanizmu przewodzenia prądu elektryczego wykorzystując zależności częstotliwościowe i temperaturowe przewodności elektrycznej. Na jej podstawie wykazano, że całkowita konduktywność jest superpozycją dwóch składowych: pasmowej, która dominuje przy...
Experimental results on frequency and temperature dependences of conductivity of GaAs layers compensated by polyenergetic H + implantation are presented. A model of hopping conductivity related to amphoteric defects is proposed.
The isolation behaviour in n-type GaAs due to proton implantation is studied. Good-quality electrical isolation has been achieved by polyenergetic implantation of H + ions with energies up to 400keV. A conductivity dependence on the frequency has been measured for the GaAs layers modified by proton irradiation both before and after annealing in the temperature range of 100–400°C. Such measurements...
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