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Standard commercial 4.5 - 40 [omega]cm both n- and p-type CzSi wafers were subjected to hydrogen or helium ion-beam treatments at 25-350°C. The ion energy was equal to 300 eV, current density - 0.15 mA/cm2, treatment duration - 30 min. According to the conducted experiments, the hydrogen and helium ion beam treatments had similar influence on the sheet resistance, thermo EMF sign and photovoltage...
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