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Conductive nanocrystalline graphite has been deposited using plasma-enhanced chemical vapour deposition at 750°C, directly onto silicon substrates without any catalyst and fabricated into micromechanical membrane and beam structures. Using the buckling profile of the membrane and beam structures, we measure a built-in strain of −0.0142 and through wafer-bow measurement, a compressive stress of 436MPa...
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