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We have synthesized amorphous Ti 3 Si 1 O 8 films 220 nm thick by rf sputtering of a Ti 3 Si target with a mixed argon-oxygen gas. The composition and structure of the films, as-deposited and upon thermal annealing in vacuum, was monitored by 2 MeV 4 He 2+ backscattering spectrometry, X-ray diffraction, and transmission electron microscopy. We contrast...
Films (220 nm-thick) deposited by reactive rf sputtering from a Ti 3 Si target with an argon/oxygen gas mixture were annealed for 30 min in vacuum at temperatures between 400 and 900 o C. The films were characterized by 2 MeV He 2+ backscattering spectrometry and X-ray diffraction to monitor thermally induced changes. As-deposited, the films are X-ray-amorphous. First...
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