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Simple method of SnO 2 layer modification, using very small quantity of hexamethyldisilazane and rapid thermal annealing in the range 800–1200°C is proposed. The distribution profile of the dopant elements of C, N, Si in the SnO 2 /SiO 2 /Si structure is investigated. Penetration of Si in the whole depth of SnO 2 is revealed and formation of SiO 2 regions in...
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