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Well-defined room-temperature photoluminescence (PL) was observed from 4H-SiC films on AlN/Si(100) complex substrates grown at temperatures below 1150 °C by the chemical vapor deposition method. The PL spectrum consists of three major emission peaks in the vicinities of 3.03, 3.17 and 3.37 eV. By the combination of experimental measurements and theoretical analysis, the origins of the PL emission...
Abstract. The amount of InN included in InGaN films grown by MOCVD (metalorganic chemical vapor deposition) was estimated by X-ray diffraction measurement technology. The In compositions in our InGaN films are measured as 0.10.34 by X-ray 2 scan using Vegards law. The inclusion of InN in InGaN layers was obtained as 0.06842.6396% by measuring the ratio of the integrated intensity of the InN(0002)...
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