The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The fluctuation‐based technique has been used to shed light onto the physical processes responsible for the performance of nitride heterostructure field effect transistors. A non‐monotonic dependence of hot‐phonon lifetime on the density of two‐dimensional electron gas (2DEG) is found and interpreted in terms of plasmon–longitudinal‐optical‐phonon resonance. Experimental data show that the hot‐phonon...
Electric noise characteristics of a triple-heterojunction AlGaAs/GaAs/AlAs/GaAs structure are measured at 10 GHz frequency for the electric field (≤1.3 kV/cm) applied in the interface plane. The maximum in the dependence of the longitudinal diffusion coefficient (deduced from the spectral density of current fluctuations) is observed at 1 kV/cm and interpreted as being brought about by back-and-forth...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.