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Layer-by-layer etching of Si(100) has been investigated by alternating chlorine adsorption and Ar + ion irradiation. As the Ar + ion source, a helicon plasma has been used to invoke the surface reaction of Si with the adsorbed chlorine. At a chlorine partial pressure of 10mPa, the Si surface was found to be fully saturated with adsorbed chlorine in 20s. In order to achieve the layer-by-layer...
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