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The introduction of SiGe channel pMOSFETs for high mobility devices is expected to enhance the impact ionization phenomenon, making it necessary to study Hot Carrier (HC) degradation also for the p-channel MOSFET reliability. The study of pure HC effects on pMOSFETs is complicated due to the mixing with Negative Bias Temperature Instability (NBTI). In the first part of this work the interaction of...
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