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Thin Ta2O5 films were grown in a low pressure chemical vapor deposition(LPCVD) reactor. The Al/Ta2O5/p-Si and Al/Ta2O5/TiSi2/p-Si capacitors were fabricated and their capacitor characteristics were investigated. During a dry O2 annealing process of the Ta2O5, the oxidation of Si substrate and TiSi2 layer underneath the Ta2O5 layer was observed resulting in formation of SiO2 and TiO2 on their surfaces,...
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