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By monitoring the cyclic behavior of surface photoabsorption (SPA) reflectance changes during the growth of GaAs at 650°C and with sufficient H2 purging time between the supply of trimethylgallium and AsH3, we have been able to achieve controlled growth of GaAs down to a monolayer. Our results show, as confirmed by photoluminescence (PL) measurements, the possibility of growing highly accurate quantum...
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