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Supersieci GaAs/AlAs i AlGaAs/AlAs przeznaczone do wykorzystania jako zwierciadła Bragga otrzymano zarówno metodą epitaksji z wiązek molekularnych MBE, jak i epitaksji z fazy gazowej z użyciem związków metaloorganicznych LP MOVPE. Supersieci te różniły się między sobą grubościami warstw, liczbą powtórzeń warstwy podwójnej (Al)GaAs/AlAs, jak i warunkami technologicznymi w których je wytwarzano. Dla...
We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs. At 1.1 W absorbed power and 3% transmission output coupler, the laser delivers 150 mW for pulse duration of 110 fs, what corresponds to an efficiency of 14%. It was achieved using semiconductor saturable absorber mirror (SESAM) grown by molecular beam epitaxy. SESAM contains a...
GaAs/AlAs Bragg mirrors on GaAs with varied number of layer pairs were grown, by molecular beam epitaxy (MBE), to be applied for semiconductor saturable absorber mirrors (SESAMs) and intensity modulators. Due to the random variation of the growth rate, substrate surface roughness, and interdiffusion at the interfaces, precise control of the growth conditions of deposited layers poses a serious problem...
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