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Bismuth (Bi) induced c(4×4) surface structure of the GaAs(100) substrate, i.e., the GaAs(100)c(4×4)-Bi surface has been studied with synchrotron-radiation photoelectron spectroscopy and ab initio calculations. The surface was prepared by combining molecular beam epitaxy and in situ electron diffraction methods, and then the sample was transferred to a photoemission chamber without breaking ultrahigh...
We have studied In-stabilized c(8×2)-reconstructed InAs(100) and InSb(100) semiconductor surfaces, which play a key role in growing improved III–V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the ζ and ζa models, which have been previously established to describe the atomic structures...
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