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We present the temperature dependent minority carrier mobility of Ga-content varying InGaAs/InAsSb superlattice infrared detectors by combining time-resolved photoluminescence and electron beam induced current measurements with a new numerical approach to minimize the uncertainty.
We present the temperature-dependent characterization of minority carrier diffusion length, minority carrier lifetime, diffusivity, surface recombination velocity and mobility on In(Ga)As/InAsSb type-II superlattices by using electron beam induced current and time-resolved photoluminescence measurements.
Device concepts of quantum well, dot, and ring for multi-band photodetection are presented in this paper. Results on a preliminary GaAs-based npn-Quantum Well Infrared Photodetector (QWIP) show two combinations of wavelength bands which can be selected using the applied bias. An InP based npn-QWIP structure is proposed to eliminate the cross talk between the bands. As a separate approach, a three...
This paper discusses quantum ring detector which is important for a number of applications including molecular spectroscopy, medical diagnostics, security and surveillance, quality control, and astronomy. It has been used for the detection of long wavelength radiation. This paper proposes a InAs/GaAs quantum ring intersublevel detector (QRID) with spectral response peaking at 1.82 THz (165 μm) and...
A multi-color superlattice quantum dot infrared photodetector consisting of two quantum dot superlattices (QD-SLs) separated by a graded barrier is reported. In each QD-SL, self-assembled QDs with a 6 nm height and a 200 nm base are embedded in a GaAs/AlGaAs superlattice. This device structure enables photocurrent generation only in one superlattice depending on the applied bias voltage polarity....
Ultraviolet and infrared (UV/IR) dual-band photodetectors based on GaN/AlGaN heterojunction structures are presented. Since the UV/IR dual-band detectors do not respond to solar radiation or another artificial visible lighting, these detectors are highly applicable for tracking and surveillance of targets. A dual-band detector which simultaneously detects UV in the 250 - 360 nm and IR in the 3 - 14...
Tunneling quantum dot infrared photodetector (T-QDIP) structures designed for multi-band infrared and terahertz radiation detection are demonstrated. In T-QDIP structures, photoabsorption takes place in InGaAs QDs (due to transition of carriers from the QD ground-state to a QD excited-state) and photoexcited carriers are selectively collected by resonant tunneling, while the dark current is blocked...
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