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Room temperature continuous wave (CW) operation at 1.5 ?m has been achieved in GaInAsP/InP DH lasers fabricated on material grown by low-pressure metalorganic chemical vapour deposition (LP-MO CVD). Threshold currents as low as 200 mA DC have been measured for devices with a stripe width of 9 ?m and a cavity length of 300 ?m. Values of To as high as 64 K have been obtained, where To is defined by...
We report the first successful room-temperature CW operation of GaInAsP/InP DH lasers emitting at 1.23 ?m grown by LP MOCVD. Current thresholds as low as 250 mA have been obtained for CW operation.
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