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Comprehensive computer simulation has been used to investigate an impact of various possible structure modifications of the 1.3-μm oxide-confined GaAs-based GalnNAs quantum-well (QW) vertical-cavity surface-emission diode lasers (VCSELs) on their operation. In particular, an influence on various physical phenomena crucial for the VCSEL operation and leading to some beneficial improvements in the VCSEL...
The quantum-dot (QD) photonic-crystal (PhC) VCSEL has unique "endlessly single-mode" property enables reduction of the threshold current, an increase in emitted power in the single mode regime and very narrow spectral linewidth, which makes it an excellent candidate for application in high data rate networks. This paper extends our previous analyses of PhC VCSELs in which we determined the...
Three methods to obtain in GaAs-based oxide-confined GaInNAs/GaAs quantum-well (QW) VCSELs an efficient emission of the 1.3-mum radiation have been analysed and compared with the aid of the comprehensive fully self-consistent model. In the tuned VCSEL, QW composition (high N content) and thickness are selected to tune the 1.3-mum emission which ensures low threshold currents. However, manufacturing...
In the present paper, the comprehensive self-consistent VCSEL physical model is used to analyse excitation of successive transverse cavity modes in oxide-confined (OC) vertical-cavity surface-emitting diode lasers (VCSELs) using the double intra-cavity-contacted 5-lambda-cavity double-quantum-well GaAs-based GaInNAs/GaAs OC VCSEL emitting the 1.3-mum radiation as a typical VCSEL example. As expected,...
The self-consistent model has been used to simulate an operation of the 1.3 -mum GaAs-based quantum-dot (QD) In(Ga)As/GaAs laser. An impact of the QD density and uniformity on laser operation characteristics has been discussed. Performance of oxide-confined (OC) and proton-implanted (PI) VCSELs has been compared and their optimal structures have been analysed. Lasing thresholds of PI VCSELs have been...
In this paper, the comparative analysis of the room-temperature (RT) continuous-wave (CW) threshold operation of index- (IG) and gain-guided (GG) oxide-confined (OC) vertical-cavity surface-emitting diode lasers (VCSELs) is carried out with the aid of the comprehensive fully self-consistent optical-electrical-thermal-recombination simulation model. As expected, performance of IG and GG OC VCSELs is...
Threshold characteristics of GaAs-based 650-nm gallium indium phosphide (GalnP) vertical-cavity surface-emitting diode lasers (VCSELs) with two different optical confinement structures are investigated with the aid of a self-consistent, fully-physical VCSEL model. Efficacy of the optical confinement introduced by the oxide aperture is compared with an alternative single-defect photonic-crystal design...
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