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In the Invited Article on pp. 1144–1157, Bugajski et al. present the development of a technology for mid‐infrared (∼9.5 μm) GaAs/AlGaAs and AlInAs/InGaAs/InP quantum cascade lasers (QCLs) and discuss basic characteristics of the lasers fabricated at the Institute of Electron Technology, Warsaw (Poland). The developed GaAs/AlGaAs lasers show record pulse powers of 6 W at 77 K and up to 50 mW at 300...
In this paper, we report the results of investigation of 9.5 µm AlGaAs/GaAs and strain compensated 4.7 µm AlInAs/InGaAs/InP QCLs. We also show the results for 9.5 µm lasers based on lattice matched AlInAs/InGaAs/InP structures. The developed GaAs/AlGaAs lasers show the record pulse powers of 6 W at 77 K and up to 50 mW at 300 K. This has been achieved by careful optimization of the MBE growth process...
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