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We propose a directional coupler at microwave frequencies based on spoof metal-insulator-metal (MIM) plasmonic structures. The spoof MIM structures consists of specially-designed metal gratings with finite thickness. The coupling length increases almost linearly with the wavelength. The full-wave simulations have been implemented in the microwave frequencies to verify the coupler.
As technology has advanced, layout dependent device parameter shifts are becoming more influential to the actual circuit operation and performance, such that design style differences could create systematic device variability due to layout unless those effect are minimized and well captured in the device model[1]. In this paper, we characterize the device layout effects on a high performance planar...
The metal influence on light emitters has been studied for more than twenty years in semiconductor light emitters. A critical feature is reliance on the correct electromagnetic boundary conditions to understand and predict the performance of either lasers or spontaneous light emitters for which the metal may influence the emission properties. Here we show that nearly (all) recent studies of metal-coupled...
Based on plasmonic metamaterials, we propose a plasmonic multi-directional frequency splitter with band-stop filters. Such a plasmonic splitter consists of three specially-designed metal gratings with finite thickness. Electromagnetic waves at the designed frequencies are confined and guided along the three grating structures and better isolation between different gratings is achieved with the band-stop...
Nanolasers made from III–V active materials and metal-clad cavities have attracted research interest because of the small volume possible with metal nanocavities.1 Proposed applications include intrachip optical interconnects and optical sensors. The metal-clad nanocavities are one of several cavity approaches being studied, and differ from dielectric and semiconductor nanocavities in their high optical...
In this paper, we present a high performance planar 20nm CMOS bulk technology for low power mobile (LPM) computing applications featuring an advanced high-k metal gate (HKMG) process, strain engineering, 64nm metal pitch & ULK dielectrics. Compared with 28nm low power technology, it offers 0.55X density scaling and enables significant frequency improvement at lower standby power. Device drive...
Metal as floating gate (FG) in combination with high-k interpoly dielectrics (IPD) is seen as a possible solution to continue the scaling of NAND Flash technology node beyond 25nm. We have investigated the thermal stability of TaN metal as FG in combination with Hf based high-k IPD stacks. IPD leakage is found to worsen with high temperature anneal and causing degraded memory behavior. Comparative...
The crystal structures and magnetic properties of (Fe0.6-Co0.4)100-XMx (M=Ti, V, Zr, Nb, Y, Cu, Pt, Al, Si, Ge, X=0 to 10) alloys annealed at 900??C were investigated. The crystal structures were bec for M=V, Nb, Y, Cu and Pt, a mixture of bec and fcc for M=Ge with X=2 to 4, and bec plus unidentified structures for M=Ti and Zr. The saturation magnetic flux density Bs decreases sharply for M=Ti, Nb...
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