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We present the self-consistent numerical model for simulation of multi-mode operation of optically pumped semiconductor disk lasers. We use this model to analyze carrier and power losses in GaN-, GaAs- and GaSb-based structures operating at 0.4, 1.3 and 2.8 μm, respectively.
We report a numerical analysis of nitride VCSELs with ITO (indium-tin-oxide) current spreading layers and AlN apertures. The results show that the position and thickness of the AlN aperture significantly influences optical and electrical properties of the analyzed structure and that the influence depends on the thickness, location and diameter of this aperture.
This paper shows results obtained by thermo-electrical modelling of nitride laser mini-arrays based on a single emitter. An influence of the array attachment, emitter number and their mutual distance on thermal and electrical properties as well as on operation parameters has been determined.
Comprehensive computer simulation has been used to investigate an impact of various possible structure modifications of the 1.3-μm oxide-confined GaAs-based GalnNAs quantum-well (QW) vertical-cavity surface-emission diode lasers (VCSELs) on their operation. In particular, an influence on various physical phenomena crucial for the VCSEL operation and leading to some beneficial improvements in the VCSEL...
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