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The work shows new results showing advantages and disadvantages of using GaN and off-oriented SiC for high-electron-mobility-transistors fabrication. We will show a difference of defect density what influences the leakage current of the Schottky diodes, as well as thermal conductivity what is of importance in high-power devices. Possible influence on the life-time and noise level will be also discussed...
Transparency of truly bulk GaN substrates obtained by ammonothermal method was measured in the mid infrared spectral range by Fourier spectroscopy. The same measurements were performed for GaN templates grown by meatlorganic vapour phase epitaxy on sapphire and SiC substrates. It has been clearly observed that truly bulk GaN substrates are transparent up to ∼7 µm whereas GaN templates grown on sapphire...
m ‐plane oriented GaN substrates of size 6 x 8 mm have been obtained by ammonothermal method and used to growing GaN epilayers by metalorganic chemical vapor deposition. The structural and optical properties have been determined for both m ‐plane GaN substrates and GaN epilayers deposited on these substrates. Excellent structural quality of m ‐plane GaN substrates has been confirmed by very narrow...
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