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An analog circuit on a flexible substrate is demonstrated for integration with charge sensitive chemical and biochemical sensors. A preamplifier circuit based on low temperature poly-Si thin film transistors (LTPS TFT) for integration with an extended gate ion sensitive field effect transistor (EG-ISFET) has been realized on a flexible polyimide substrate. This circuit, where sensors and preamplifiers...
In this paper, the authors' research work is focused on modeling of railway transportation system's reliability and safety with respect to hazards. The paper begins with an introduction related to a literature review on system reliability and safety modeling and reliability models. A state-transition model was proposed. Defining states in terms of railway transportation system is a complex issue,...
We probe the effect of nuclear spin interaction with a resident electron spin in a quantum dot using resonance fluorescence spectroscopy and two-photon interference experiments. Screening of the nuclear field fluctuations is demonstrated to successfully generate indistinguishable single photons.
The work shows new results showing advantages and disadvantages of using GaN and off-oriented SiC for high-electron-mobility-transistors fabrication. We will show a difference of defect density what influences the leakage current of the Schottky diodes, as well as thermal conductivity what is of importance in high-power devices. Possible influence on the life-time and noise level will be also discussed...
Bulk GaN crystals are regarded as the most promising candidates for substrates for optoelectronic, high power and high frequency electronic devices. In this paper some principles of ammonothermal method of bulk gallium nitride growth are presented. Excellent structural properties and wide spectrum of electrical parameters of obtained this way truly bulk GaN crystals are shown. In considered crystals...
Bulk GaN crystals are regarded as the most promising candidates for substrates for optoelectronic, high power and high frequency electronic devices. In this paper some principles of ammonothermal method of bulk gallium nitride growth are presented. Excellent structural properties and wide spectrum of electrical parameters of obtained this way truly bulk GaN crystals are shown. In considered crystals...
InGaN laser diodes were fabricated with a tapered resonator in order to combine high quality of the lasing mode, characteristic for narrow stripe lasers, with high optical power, expected from wide area devices and to reduce current density responsible for device degradation. A number of devices were tested with taper angles between 2° and 5° and various taper lengths. It is demonstrated that, with...
This paper presents preliminary results of a radio chip design, implemented in a standard 90 nm CMOS process, which provides significant platform cost reduction by fully integrating the LNAs and high efficiency Class-AB PAs (and their matching networks) in a 1x2 scheme for 802.11a/g/n protocols.
In recent years several technologies have emerged which enable building a service oriented architecture (SOA), among them Web services and universal plug and play (UPnP). The two technologies have achieved high acceptance however in different areas. New applications look for combining their advantages by mapping services bilaterally. This paper describes approaches and appliances for this service...
The rapid growth of the signal processing theory resulted in the rise of new methods in diagnostics of the drives. This paper focuses on the application of the complete systems of orthogonal functions, for which fast computational procedures are applicable. It is shown that a spectral analysis employing bases of the Haar functions is highly suitable for both analysis and synthesis of the diagnostic...
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