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We have presented two contactless modes of electromodulation spectroscopy as tools for detailed nondestructive characterization of low dimensional semiconductor device structures. Several examples have been shown for different solutions of the laser structures for applications in 1.3 - 1.55 mum telecommunication range. The ways for determining their fundamental properties which are related then to...
We present the first low-threshold 1.55-mum grown on GaAs. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room-temperature, continuous-wave, threshold current density was 579 A/cm2 and peak output power was 130 mW.
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