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The electrical and optical properties of the lattice-mismatched InGaAs/GaAs heterostructures, with partial strain relaxation, were studied by deep level transient spectroscopy (DLTS) and photoreflectance (PR) spectroscopy, respectively. In the samples one of deep electron traps, revealed by DLTS, was ascribed to misfit dislocations at the interface, for which capture kinetics, concentration depth...
In this paper the effect of strain relaxation on the structural and optical properties of lattice mismatched InGaAs/GaAs heterostructures has been studied by means of X-ray diffractometry and photoreflectance spectroscopy. X-ray diffractometry reveals anisotropic strain relaxation, related to asymmetry in the formation of misfit dislocations, causing distortion of the epilayer unit cell and lowering...
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