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The non-linear dependence of photoconductivity (PC) on wavelength and intensity of illumination was used to evaluate the lifetime and quantum efficiency coefficient of carrier photogeneration in RF sputtered thin films of a-Si:H. The change of spatial distribution of radiation intensity over the sample thickness with the change of photon energy has been taken into account. Due to this, for the photon...
A new contactless method of determining the carrier lifetime in semiconductors is presented. It uses the dependence of the magnetic field evoked by photoelectromagnetic current in an illuminated semiconductor placed in an external magnetic field on the frequency of chopping the illumination intensity. This method was used to determine the electron lifetime in p-type crystalline silicon. It is suitable...
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