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Impedance spectroscopy methods were proposed for direct evaluation of electrical properties of the AlGaN/GaN heterostructures. The impedance spectra were measured using a two contact mercury probe. Application of the proper distributed elements equivalent circuits enabled to evaluate not only the typically obtained parameters of the heterostructures such as sheet carriers concentration and its pinch...
To check the influence of different process parameters, such as precursors (TMAl and TMGa) flow rates, growth interrupt time between subsequent stages of the growth for purging the reactor, on the properties of the two dimensional electron gas (2DEG) in the AlGaN/AlN/GaN heterostructure, seven sets of HEMT structures were developed and investigated. It was demonstrated that for the growth of canonically...
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