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The paper presents the parameters of MIS transistors with plasma deposited thin film aluminum oxide gate insulator. Al2O3 films were synthesized by means of the low-energy, low-temperature reactive pulse plasma (RPP) method. Investigated transistors, with channel width to length (W/L) ratios of 200/10 [žm/žm] and 200/20 [žm/žm] were manufactured in a standard microelectronic technological laboratory...
Mo contacts of areas varying from 2.4 to 9.4 mm 2 were electron beam deposited onto undoped and sulphur doped a-cBN layers. Layers were grown by the reactive pulse plasma method on oxidized, or oxidized and subsequently covered with Au, silicon substrates. Current-voltage measurements of lateral Mo/a-cBN/Mo structures revealed that obtained contacts are non-rectifying high-resistive Schottky...
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