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A numerical method is presented to calculate the two-dimensional potential distribution in a semiconductor according to the abrupt depletion approximation. The technique is based on the boundary element method, and the shape of the depletion region is determined iteratively.
By using the abrupt-depletion approximation, one obtains a linear equation for the minority-carrier concentration in a semiconductor. This equation describes the diffusion and the recombination statistics of the carriers under steady-state conditions. In a 2-dimensional geometry, this equation can be replaced by an equivalent integral equation, so that the given problem can be easily solved numerically.
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