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In this paper, we theoretically study the electrical properties of a separate absorption, grading, charge, and multiplication InGaAs/InP avalanche photodiodes(APD) on the multiplication layer for different carrier lifetime, doping and traps concentration. These characteristics can be used to analyze some problems in the process of device fabrication.
InP/GaAsSb/InP DHBTs with 125 and 150 nm collector thicknesses were fabricated by optical contact lithography in a standard triple mesa process. It is shown that a peak current-gain cut-off frequency fT = 343 GHz and maximum oscillation frequency fMAX = 351 GHz were simultaneously achieved on devices with an emitter area of 0.6 × 11.5 μm2 and a 150 nm collector. To the best of our knowledge, these...
In response to the continually increasing appetite for bandwidth, most transistor technologies have recently made great strides towards higher cutoff frequencies: Silicon MOSFETs, SiGe HBTs, InP-based HEMTs and a variety of InP -based HBTs all show cutoff frequencies fT and/or fMAX exceeding 300 GHz, and in some cases approaching 800 GHz. Proponents of various technologies have stated that the development...
The impact of growth conditions in the presence of CBr4 is examined for the MOVPE growth of GaAsSb intended for high-performance DHBT applications. We show that the growth is controlled by competing gas phase reactions and by effective V/III flux ratios that can be quite different from those set at the gas inlet. For example, under specific conditions, the C-doping efficiency is shown to increase...
Good-quality metamorphic InP buffer layers have been successfully grown on GaAs substrates by metal-organic chemical vapor deposition. Characterization by atomic force microscope, transmission electron microscopy, high-resolution X-ray diffraction, and Hall measurements indicated that the layers are of high crystalline quality, good mobility, and excellent surface morphology. On this buffer, we demonstrated...
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