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It is well known that the efficiency of InGaN LEDs reduces significantly at high injection currents. To date there have been several explanations for this phenomena, although no consensus has emerged as to the controlling mechanism(s). In this paper we report on the temperature dependence of the photoluminescence emission from an InGaN/GaN quantum well structure as a function of excitation level....
Localisation lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that these fluctuations in alloy concentration alone can localise the carriers. While the holes are localised on a scale of approximately ∼1nm, the electrons are localised...
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