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The PECVD silicon oxy-nitride film has been widely used as antireflective coating (ARC) and contact etch stop layer (CESL) in IC fabrication. It is typically deposited using SiH4&N2O gas mixtures at temperatures around 400°C, with film properties such as reflective index, wet etch rate, stress and uniformity controlled by varying gas flows, RF powers, temperature and pressures. In addition, the...
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