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In this work, crack statistics are developed for MOCVD‐grown 12 μm thick GaN on patterned Si substrate for different sizes, trench widths and trench heights of the mesas. Optical microscope is used to obtain the percentage of cracked mesas in order to develop the crack statistics. The crack statistics show that the size and the trench height of the mesas have large effects on the percentage of cracked...
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