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This paper presents low-frequency noise in cSi 0.75 Ge 0.25 and cSi 0.65 Ge 0.35 p- and n-channel compressively strained Silicon–Germanium on Insulator (cSGOI) MOSFETs with 15nm thick SiGe films and with TiN/HfO 2 /SiO 2 gate stacks, obtained using the enrichment technique. In strong inversion, front and back interface current noise in PMOSFET devices...
This paper presents low-frequency noise in Si0.75Ge0.25 and Si0.65Ge0.35 p- and n-channel strained Germanium on Insulator (SGOI) MOSFETs with 15nm thick substrates and with TiN/HfO2/SiO2 gate stacks, obtained using the enrichment technique. In strong inversion, front and back interface current noise in PMOSFET devices is described using the ΔN model, whereas NMOSFET noise is described using the ΔN-Δµ...
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