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PL characteristics of MOCVD-grown InAs QDs using a GaInP cover layer were investigated. It is confirmed that the strain modification effect of the cover layer regardless of growth methods is a cause of wavelength shift of QDs.
GaP-based InAs quantum dots (QDs) on a thin GaP1-xNx buffer layer grown by the low-pressure metalorganic chemical vapor deposition were investigated by the atomic force microscopy. The InAs dot density was significantly increased from 2.6 times 109 cm-2 to 2.0 times 1010 cm-2 with increasing the nitrogen composition of the GaP1-xNx from x = 0 to 4.5. The InAs QDs grown on GaP and GaPN with various...
The GaInNAs and GaInAsSb based self-organized quantum dots were investigated. We observed the increased dot density, increased wavelength and improved emission efficiency by adding the nitrogen or antimony into the dot and/or its matrix. These materials are attractive for realizing the long wavelength VCSELs.
MOCVD grown self-assembled quantum dot using dilute nitrogen material system (GaInNAs) is presented for GaAs-based long wavelength VCSELs. Suppression of Coalescence and inhomogeneous broadening by incorporating nitrogen into dot structure is particularly discussed.
Multilayer of InAs QD with thin spacer thickness using GaNAs stress compensation layers (SCL) was investigated for the purpose of high modal gain. Multilayer up to 5 layers with 18 nm thin spacer thickness was realized in 1.4 um wavelength range without degradation of optical quality. This result indicates advantage of GaNAs spacer for multi stacking with thin spacer layer thickness.
Polarization characteristics of MBE grown InAs QD using a Ga(In)AsSb cover layer was investigated using room temperature photoluminescence for in-plane direction. The polarization insensitivity was observed by introducing In into a cover layer, whereas, Sb-introduction caused polarization sensitivity with good optical quality over 1.2 mum
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