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GaP-based InAs quantum dots (QDs) on a thin GaP1-xNx buffer layer grown by the low-pressure metalorganic chemical vapor deposition were investigated by the atomic force microscopy. The InAs dot density was significantly increased from 2.6 times 109 cm-2 to 2.0 times 1010 cm-2 with increasing the nitrogen composition of the GaP1-xNx from x = 0 to 4.5. The InAs QDs grown on GaP and GaPN with various...
MOCVD grown self-assembled quantum dot using dilute nitrogen material system (GaInNAs) is presented for GaAs-based long wavelength VCSELs. Suppression of Coalescence and inhomogeneous broadening by incorporating nitrogen into dot structure is particularly discussed.
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