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For the first time, an efficient methodology to accurately characterize the gate-bulk leakage current (Igb) and gate capacitance (Cgg) of PD SOI floating body (FB) devices was proposed and demonstrated in 40-nm PD SOI devices with ultra-thin oxide EOT 12 A. By applying the RF testing skill for the proposed SOI test patterns, we can eliminate properly the parasitic elements due to the co-existence...
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