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Metal-Oxide-Semiconductor Field Effect Transistors MOSFETs (MOSFETs) transistor have been scaled tremendously through Moore's Law since 1974 in order to compact transistors in a single chip. Thus, a proper scaling technique is compulsory to minimize the short channel effect (SCE) problems. In this paper, the virtual fabricated design and device's characterization of 14 nm HfO2/WSi2 n-type MOSFET device...
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