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Synergetic effects of total-ionizing-dose irradiation on the single event upset (SEU) and single event transient (SET) performance of 40-nm sequential circuits are studied at doses up to 2 Mrad(SiO2). The impacts of input pattern and supply voltage are evaluated. An initial increase of SEU- and SET-induced soft error cross-section versus total dose is observed, followed by a decreasing trend at higher...
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