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An embedded 1 Mbit 2T1C gain-cell memory macro using indium-gallium-zinc oxide semiconductor FETs (OSFETs) with an extremely low off-state current of less than 1 zA (10−21 A) was fabricated. In the 2T1C gain cell, an OSFET for the write operation was stacked over a SiFET for the read operation. The 1 Mbit macro was fabricated using a combination of 60-nm OSFET and 65-nm CMOS processes. It achieves...
With the increasing of power electronic devices, the leakage current caused by electrical equipment fault not only contains power frequency AC component, but also includes more and more DC and high frequency AC components, which means that the traditional leakage current sensor is not working anymore. For example, the DC component can easily drive the traditional current sensor into saturation state...
Recently, a tetragonal-like phase BiFeO3 (BFO) has been made by utilizing highly mismatched LaAlO3 (LAO)[1]. However, a significant contribution from the leakage current make great difficulty for a direct experimental observation of the ferroelectric hysteresis loop [1]. Here, ferroelectric BaTiO3 (BTO) was epitaxially grown on T-phase BFO/BTO (i.e., BFO film grown on a (001) oriented LAO substrate)...
This paper presents the analysis of the substrate leakage current to anode current ratio of the 700V n-type lateral IGBT with quasi-vertical DMOSFET (QVDMOS) fabricated with junction isolation technology. To improve the substrate leakage, a p-type buried layer (BLP) is inserted between the n-type drift region and the n-type buried layer (BLN). A junction isolated p-region, which is connected to the...
For the first time, we report a spatial mapping methodology to directly obtain spatial BD distributions from TDDB data at wafer-scales. The results reveal BD defects are strongly clustered towards later stress times and explain the root-cause of non-Poisson area-scaling in agreement with recently developed time-dependent clustering model [3,4]. This methodology provides important detailed information...
We have investigated the precursor effect of La2O3 cap layers on Vfb tuning and EOT reduction in SiO2/HfO2/TiN gate stacks. The Vfb tuning and EOT reduction correlate with the intermixing of La2O3 and HfO2 dielectrics which forms dipoles at the lower interface between HfO2 and SiO2 IL and the diffusion of La and Hf atoms to the SiO2 IL. The use of La(fAMD)3 precursor for the La2O3 cap layer deposition...
In this paper, a learnable cellular nonlinear network (CNN) with space-variant templates, ratio memory (RM), and modified Hebbian learning algorithm is proposed and analyzed. By integrating both the modified Hebbian learning algorithm with the self-feedback function and a ratio memory into CNN architecture, the resultant ratio-memory (RMCNN) is called the self-feedback RMCNN (SRMCNN) which can serve...
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