The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Electrical contacts of NiSi 0.82 Ge 0.18 to p + -Si 0.82 Ge 0.18 were fabricated and characterised. Lateral growth of the NiSi 0.82 Ge 0.18 under SiO 2 isolation was observed. A three-dimensional model was employed to extract the contact resistivity by considering both the lateral growth and the presence of a recessed NiSi 0.82 ...
NiSi 0.8 Ge 0.2 film formed on a strained Si 0.8 Ge 0.2 layer epitaxially grown on a Si(100) substrate wafer is morphologically stable up to 750 o C. The NiSi 0.8 Ge 0.2 film is found to be strongly oriented along its <010> direction. This remarkable stability is thus possibly...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.