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Photoluminescence (PL) from He + -implanted Si (Si:He, He + dose—2×10 16 cm −2 , at 150keV) is related to its microstructure; it has been tuned by processing at 720–1400K under hydrostatic Ar pressure (HP, up to 1.2GPa). Processing of Si:He at 720K for 10h results in an appearance of the D2 and D3 dislocation-related PL lines, these last of the highest intensity. Only...
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