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In this work, a deep submicron double-gate (DG) Gallium Nitride (GaN)-MESFET design and its 2-D threshold analytical model have been proposed and expected to suppress the short-channel-effects for deep submicron GaN-MESFET-based low power applications. The model predicts that the threshold voltage is greatly improved in comparison with the conventional Single-Gate GaN-MESFET. The developed approaches...
Due to the excellent control of DG MOSFETs over the short channel effects, they have been considered as a leading candidate to extend the scaling limit of conventional bulk MOSFETs. However, the hot carrier injection into gate oxides remains a potential problem in reliability field hence altering the device lifetime. In the present paper, a comprehensive drain current model incorporating hot-carrier-induced...
The Double Gate (DG) MOSFET has been proposed as potential alternative to the conventional bulk CMOS structure for extended CMOS scalability beyond 30 nm partly due to its immunity to short channel effects. So, the objective of this work is to provide an accurate drain current model based on an automatic parameter extraction method with PSO (Particle Swarm Optimization) for Current-Voltage-based MOSFET...
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