The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Due to the excellent control of DG MOSFETs over the short channel effects, they have been considered as a leading candidate to extend the scaling limit of conventional bulk MOSFETs. However, the hot carrier injection into gate oxides remains a potential problem in reliability field hence altering the device lifetime. In the present paper, a comprehensive drain current model incorporating hot-carrier-induced...
In this work, a physics-based compact subthreshold swing (S) model including bulk traps effects is presented for undoped (or lightly doped) symmetric double-gate (DG) MOSFETs based on an analytical analysis of the two-dimensional (2D) Poisson equation in which the traps effects have been considered. Using this compact model, we have studied the effects of the defects on the scalability limits of DG...
The Double Gate (DG) MOSFET has been proposed as potential alternative to the conventional bulk CMOS structure for extended CMOS scalability beyond 30 nm partly due to its immunity to short channel effects. So, the objective of this work is to provide an accurate drain current model based on an automatic parameter extraction method with PSO (Particle Swarm Optimization) for Current-Voltage-based MOSFET...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.