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We studied the incorporation of Mg-related impurity centers in GaN crystals depending on the direction of the crystallization front. Two series of GaN crystals – (i) undoped and (ii) Mg-doped – were grown by High Nitrogen Pressure Solution (HNPS) method under otherwise identical conditions. Each series contained four samples with (101¯0), (112¯0), (202¯1¯) and (202¯1) orientations. The low-temperature...
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