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Low cost planar ferroelectric thick film varactors based on Barium Strontium Titanate (BST) are realized and their nonlinear behavior with varying DC bias is investigated. A model for the capacitance tunability is utilized for nonlinear simulations and compared to measurements. The model based on static measurement of the varactor's capacity is extended by the results from measurements with pulsed...
Because of the low electron effective mass and the high resulting carrier velocities, we are developing InGaAs/InP MOSFETs for potential application in VLSI circuits at scaling generations beyond 22 nm. We will report device design, review gate dielectric growth processes, and describe in detail the development of process modules for fabrication of fully self-aligned enhancement-mode devices. Key...
Because of the low electron effective mass and the high resulting carrier velocities, we are developing InGaAs/InP MOSFETs for potential application in VLSI circuits at scaling generations beyond 22 nm. We will report device design, review gate dielectric growth processes, and describe in detail the development of process modules for fabrication of fully self-aligned enhancement-mode devices. Key...
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