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Comparative study of p-type 4H-SiC epitaxial layers grown simultaneously on two different 4H-SiC substrates, namely n-type and semi-insulating have been done by different structural, optical and electrical experimental techniques.
The recent achievement of a continuous silicon monocrystalline thin film on 3C-SiC epilayers deposited on silicon substrates has opened the field for new microstructures. In this work, this original hetero-structure is the basis for the elaboration of an entire cantilever for atomic force microscopy. The hetero-epitaxially grown silicon layer is used to define the tip of the cantilever fabricated...
In this work structural properties of TiO2 thin films doped with different amounts of Nd have been presented. Thin films were deposited on silicon substrates using high energy reactive magnetron sputtering process and for the measurements TiO2 doped with 0.84 at. % and 8.51 at. % of Nd have been selected. Diversification of the thin film surface was investigated using atomic force microscope. The...
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