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The performance and reliability of ZrO2/In0.53Ga0.47As MOSFETs are shown to be improved by simultaneous reduction of dielectric and interface charges. An amorphous (La)AlOx interlayer at the ZrO2/In0.53Ga0.47As interface is a key to reduce border traps, interface traps and move ZrO2 fixed charge away from the In0.53Ga0.47As. Border traps are reduced ~3x, effective fixed charges are reduced ~3x and...
Charge trapping and wearout characteristics of self-aligned enhancement-mode GaAs nMOSFETs with silicon interface passivation layer and HfO2 gate oxide are systematically investigated at various time scales (from micro-seconds to seconds). Unlike high-kappa on silicon devices, both bulk trapping and interface trapping affect the PBTI (positive bias temperature instability) characteristics of nMOSFETs...
Research on high-k (HfO2) materials has been expanded significantly. However, MOSFETs with high-k gate dielectrics on silicon still have several problems with relatively low mobility of high-k devices in thin EOT regime compared to the universal curve. In this work, as an alternative of silicon substrate, InP and In0.53Ga0.47As has been studied. W e present the material and electrical characteristics...
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