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Reports the nearly ideal electrical characteristics of p-Ge/N-GaAs heterojunction diodes grown by molecular beam epitaxy. The temperature and device size dependencies of the current-voltage characteristics have been investigated. At room temperature, unity ideality factor has been demonstrated over almost six decades of current.<<ETX>>
The current-voltage characteristics of 500 mA AlGaAs/GaAs power heterojunction bipolar transistors are reported and the influence of case temperature on current handling capability and current gain are analysed. Current handling capabilities of 400-800 mA/mm per emitter periphery at different case temperatures have been successfully demonstrated using a low-doped GaAs layer as an emitter ballasting...
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